Monolithic integration techniques for fabricating photodetectors with transistors on same substrate

ABSTRACT

Examples of the various techniques introduced here include, but not limited to, a mesa height adjustment approach during shallow trench isolation formation, a transistor via first approach, and a multiple absorption layer approach. As described further below, the techniques introduced herein include a variety of aspects that can individually and/or collectively resolve or mitigate one or more traditional limitations involved with manufacturing PDs and transistors on the same substrate, such as above discussed reliability, performance, and process temperature issues.

PRIORITY CLAIM

This application is a continuation of U.S. Utility application Ser. No.15/472,177, which is a divisional of U.S. Utility application Ser. No.14/950,902 entitled “MONOLITHIC INTEGRATION TECHNIQUES FOR FABRICATINGPHOTODETECTORS WITH TRANSISTORS ON SAME SUBSTRATE,” filed Nov. 24, 2015,which claims priority to U.S. Provisional Patent Application No.62/083,321, entitled “MONOLITHIC INTEGRATION OF SEMICONDUCTORPHOTODETECTOR AND CMOS TRANSISTORS VIA STANDARD TRENCH ISOLATIONPROCESS,” filed on Nov. 24, 2014; U.S. Provisional Patent ApplicationNo. 62/112,615, entitled “MONOLITHIC INTEGRATION OF SEMICONDUCTORPHOTODETECTORS AND CMOS TRANSISTORS USING TRANSISTOR VIA 1ST APPROACH,”filed on Feb. 5, 2015; U.S. Provisional Patent Application No.62/193,129, entitled “MONOLITHIC INTEGRATION PROCESS AND STRUCTURE,”filed on Jul. 16, 2015; and U.S. Provisional Patent Application No.62/197,098, entitled “MONOLITHIC INTEGRATION OF PHOTODETECTORS AND CMOSTRANSISTORS,” filed on Jul. 26, 2015; all of which are incorporated byreference herein in their entireties.

TECHNICAL FIELD

Embodiments of the present disclosure relate to semiconductor devicedesign, and more particularly, to monolithic integration ofsemiconductor photodetectors and transistors.

BACKGROUND

Fueled by big data, cloud computing, as well as other computer networkand telecommunication applications, there is an ever increasing demandfor high speed telecommunication means. High speed optical transmittersand receivers (or collectively referred to herein as “transceivers”)that are capable of exceeding a transmission rate of 25 Gbps haveattracted the public's attention.

While optical transceivers are gaining popularity, semiconductorphotodetector (PD) manufacturing technology is often different andsometimes even incompatible with other kinds of semiconductor devicemanufacturing technologies, such as those for metal oxide semiconductor(MOS) transistors. Therefore, conventional PD devices are manufacturedand packaged separately from other related integrated circuits (e.g.,the transimpedance amplifier (TIA) chips). This separation unfortunatelyhas become a bottleneck for high frequency communication. To overcomethis limitation, it is preferable to manufacture the PD devices and theTIA on the same chip, which is known as “monolithic integration” of PDand TIA. However, a wide variety of issues come with such monolithicintegration.

BRIEF DESCRIPTION OF THE DRAWINGS

One or more embodiments of the present disclosure are illustrated by wayof example and not limitation in the figures of the accompanyingdrawings, in which like references indicate similar elements. Thesedrawings are not necessarily drawn to scale.

FIG. 1 is a cross-sectional view of a conventional monolithic integratedsemiconductor structure having a normal incidence photodetector (PD) anda complementary metal oxide semiconductor (CMOS) field effect transistor(FET).

FIG. 2 is a cross-sectional view of a monolithic integratedsemiconductor structure incorporating one or more aspects of thedisclosed techniques.

FIGS. 3A-3R are cross-sectional views showing various process steps formanufacturing the semiconductor structure of FIG. 2 in accordance withsome embodiments.

FIG. 4A is a cross-sectional view of another monolithic integratedsemiconductor structure incorporating one or more aspects of thedisclosed techniques.

FIG. 4B is a cross-sectional view of a monolithic integratedsemiconductor structure that is a variant of the structure shown in FIG.4A.

FIGS. 5A-5Q are cross-sectional views showing various process steps formanufacturing the semiconductor structure of FIG. 4A in accordance withsome embodiments.

FIG. 6A is a cross-sectional view of yet another monolithic integratedsemiconductor structure incorporating one or more aspects of thedisclosed techniques.

FIGS. 6B-6C are cross-sectional views of monolithic integratedsemiconductor structures that are variants of the structure shown inFIG. 6A.

FIGS. 7A-7J are cross-sectional views showing various process steps formanufacturing the semiconductor structure of FIG. 6A in accordance withsome embodiments.

FIGS. 8A-8B are a top view and a cross-sectional view of a monolithicintegrated semiconductor structure including different sizes of fillshapes for PD and transistor.

FIGS. 9A and 9B are cross-section views of additional photodetectorformation methodologies to which one or more aspects of the monolithicintegration techniques introduced here may be applied.

DETAILED DESCRIPTION

It is observed that one primary cause for the aforementioned highfrequency bottleneck for optical transceivers is the physical separationbetween the optical devices (e.g., photodetectors (PD) or sensors) andother circuits (e.g., transimpedance amplifiers (TIA), other amplifiers,or analog to digital convertors (ADC)). A typical optical device forreceiving optical signal can be a P-I-N diode, including twohighly-doped semiconductor layers with opposite electrical polarity(Le., one “p-type” and one “n-type”) and a photon absorption layer(i.e., “intrinsic”) sandwiched in between the two layers. On the otherhand, an amplifier typically includes a group of transistors (e.g.,complementary metal oxide semiconductor (CMOS) or a combination ofBipolar and CMOS technology (BiCMOS)). In the context of P-I-N POs, theterm “highly-doped” typically may be understood as having a dopingconcentration above 10¹⁸ cm⁻³; the term “intrinsic” typically may beunderstood as having a doping concentration below 10¹⁷ cm⁻³.

As introduced above, to overcome this limitation, it is preferable tomanufacture the PD devices and the transistors (e.g., TIA) on the samechip, which is known as “monolithic integration” of PD and transistors.However, a wide variety of issues come with such monolithic integration.Among others, one important issue for monolithic integration is thelarge step height difference between PD devices (which typically haveheights ranging from 500 nm to 3 μm) and CMOS transistors (whichtypically have heights about 100 nm). With the natural step heightdifference between the two types of devices being this much, whenstandard middle-of-line (MOL) manufacturing processes for formingcontact plugs are applied for both devices, the transistors' MOL contactplug height needs to be raised by a large amount in order to match thePOs' height. This is illustrated in FIG. 1.

FIG. 1 is a cross-sectional view of a conventional monolithic integratedsemiconductor structure 100 having a normal incidence PD device 110 anda CMOS field effect transistor (FET) (MOSFET) device 120. Both devices110 and 120 are fabricated on substrate 102, typically silicon based.Also shown in FIG. 1 are shallow trench isolation (STI) features 108that separate the PD 110 and the transistor 120. The STI is anintegrated circuit features which prevents or reduces electric currentleakage between adjacent semiconductor device components. The STIfeatures 108 are typically formed early during the semiconductor devicefabrication process, before transistors are formed. Example key steps ofthe STI process include etching a pattern of trenches on the top surfaceof the silicon substrate 102, depositing one or more dielectricmaterials (e.g., silicon dioxide) to fill the trenches, and removing theexcess dielectric. After the STI features are formed on the substrate102, devices then can be formed on these isolated “islands,” called mesa(e.g., mesa 104(1) and mesa 104(2)).

In the integrated circuit (IC) chip fabrication industry, the process offabricating a semiconductor wafer is divided into different stages orgroups of steps. These stages are commonly known as front-end-of-line(FEOL), middle-of-line (MOL) and back-end-of-line (BEOL). The FEOL stagegenerally refers to the stage for forming devices (e.g., transistors) onor in a semiconductor wafer, e.g., forming doped regions, active areas,etc. The MOL stage is the stage where conductive structures areconnected to the FEOL devices. The BEOL stage is the stage for finalwafer processing where an active region is connected to outsidecircuitry. Note that, one or more aspects of the techniques introducedhere have the effect of breaking the traditional boundaries (and thelimitations associated therewith) among FEOL, MOL, and BEOL forfabricating photodetectors during monolithic integration; therefore, forpurposes of this disclosure, the FEOL stage ends when the transistordevices are formed (i.e., without their contact plugs), and the BEOLstage starts at the deposition of the first interconnect metal layer(M1), all irrespective of the fabrication progress of the photodetectordevices.

Specifically, in a typical IC chip build, the MOL stage bridges the FEOLstage to the BEOL stage. Like said, the FEOL stage forms thesemiconductor devices, the BEOL stage forms interconnects and wiring.The MOL stage typically connects the FEOL and BEOL by using interconnectmaterials that prevent the diffusion of BEOL metals to FEOL devices.Specifically, the FEOL transistor devices are typically processed usingsingle crystal and/or poly-crystalline silicon. The BEOL interconnectsare typically made of multiple low electrical resistivity metals; thebulk of the conductor is copper or aluminum. If copper or aluminumdiffuses into the FEOL silicon based devices, then it can causetransistor characteristics degradation. This is a main reason for theMOL connection. This connection is usually made of refractory metals,such as tungsten, and perhaps some barrier layers such as titaniumnitride (TiN) and titanium tungsten (TiW). Although tungsten has ahigher resistivity compared to other metals. its ability to preventcopper diffusion while still maintaining sufficient conductivity isdesirable. Moreover, refractory metals typically have much higherelectromigration resistance than copper or aluminum, thereby providingbetter device reliability under high electrical stress.

As illustrated in FIG. 1, with the large step height difference betweenthe PD 110 and the transistor 120, the height of the transistor's MOLcontact plugs 130 needs to be largely raised to match the PD's height.However, contact plugs for devices, similar to vias between metalinterconnect layers, generally are created or opened by usingdirectional dry etching, which inherently provides a tapered shapetoward transistor source/drain area for electrical connection. With thistapered nature and given that the distance between the source and drainareas for a specific semiconductor technology is typically fixed, if thecontact plug's height is too large, then the contact plugs for thesource and drain of the transistor 120 can become too close to or evenoverlap with each other, such as illustrated by the area 132 of FIG. 1.This presents a serious reliability problem because the area 132 caneasily create an electrical short between the source and drain areas ofthe transistor 120.

In addition to the reliability issues, given a specific semiconductormanufacturing technology, it is typical that a transistor's performanceis tightly coupled to its physical dimensions, including the height ofits contact plugs. Therefore, having unusually tall metal contact plugscauses higher-than-designed parasitic resistance for the CMOStransistors, which can adversely affect the performance of thetransistor 120.

Even further, another issue is the extra thermal requirement that isplaced on the CMOS FET devices when they are fabricated alongside withPD devices, exposing the FET devices to PD related processes. Morespecifically, high speed PDs are typically made out of photosensitivematerials, such as Ge, GaAs, and lnGaAs, that are not stable at certainCMOS FET's FEOL process temperatures. On the other hand, the epitaxialtemperature of PD photosensitive materials is generally higher than thetolerance temperature of BEOL metals.

Among other reasons, such as the choice of the materials for silicideformation, the aforesaid temperature constraint and step heightlimitation have made it very difficult to choose an appropriateinsertion point for the photosensitive materials during the monolithicintegration process. These issues are exacerbated when the technologymoves toward higher speed PD (e.g., transmission rate>25 Gbps) and moreadvanced CMOS technology node (e.g., technology node<90 nm); forexample. because when the transistor gate length becomes shorter, thesource and drain are even more closer to each other, thereby creatingdesign difficulty and reliability issues for long contact plugs.

Accordingly, introduced here are various techniques to alleviate orovercome these problems that come with the monolithic integration of PDand transistor. Examples of the various techniques introduced hereinclude, but not limited to, a mesa height adjustment approach duringshallow trench isolation (STI) formation (or simply referred to as themodified STI approach), a transistor via first approach, and a multipleabsorption layer approach. As described further below, the techniquesintroduced herein include a variety of aspects that can individuallyand/or collectively resolve or mitigate one or more traditionallimitations involved with manufacturing PDs and transistors on the samesubstrate, such as above discussed reliability, performance, and processtemperature issues. With the introduced techniques, it is possible tomaintain the transistor's designed performance and also implement a PDthick enough to have good performance, without the traditional dilemmaof either sacrificing the transistor's performance and reliability orthe PD's performance because of the step height difference between thetwo devices.

In the following description, the example of monolithic integrationbetween a PD and a CMOS transistor is used, for illustrative purposesonly, to explain various techniques that can be implemented formanufacturing PD and transistor on the same substrate. Note, however,that the techniques introduced here are not limited in applicability toany particular kind of PD and/or transistors. For example, at least someof the techniques introduced here can be used for BiCMOS transistorsand/or waveguide-based PDs.

Further, in the following description, numerous specific details are setforth to provide a thorough understanding of the present disclosure. Itwill be apparent to one skilled in the art that the techniquesintroduced here may be practiced without these specific details. Inother instances, well-known features, such as specific fabricationtechniques, are not described in detail in order to not unnecessarilyobscure the present disclosure. References in this description to “anembodiment,” “one embodiment,” or the like, mean that a particularfeature, structure, material, or characteristic being described isincluded in at least one embodiment of the present disclosure. Thus, theappearances of such phrases in this specification do not necessarily allrefer to the same embodiment. On the other hand, such references are notnecessarily mutually exclusive either. Furthermore, the particularfeatures, structures, materials, or characteristics may be combined inany suitable manner in one or more embodiments. Also, it is to beunderstood that the various exemplary embodiments shown in the figuresare merely illustrative representations and are not necessarily drawn toscale.

The terms “coupled” and “connected,” along with their derivatives, maybe used herein to describe structural relationships between components.It should be understood that these terms are not intended as synonymsfor each other. Rather, in particular embodiments, “connected” may beused to indicate that two or more elements are in direct physical orelectrical contact with each other. “Coupled” may be used to indicatethat two or more elements are in either direct or indirect (with otherintervening elements between them) physical or electrical contact witheach other, and/or that the two or more elements co-operate or interactwith each other (e.g., as in a cause and effect relationship).

The terms “over,” “under,” “between,” and “on” as used herein refer to arelative position of one material layer with respect to other materiallayers. As such. for example, one layer disposed “over” or “under”another layer may be directly in contact with the other layer or mayhave one or more intervening layers. Moreover, one layer disposed“between” two layers may be directly in contact with the two layers ormay have one or more intervening layers. In contrast, a first layer “on”a second layer is in contact with that second layer. Additionally, therelative position of one layer with respect to other layers is providedassuming operations are performed relative to a substrate withoutconsideration of the absolute orientation of the substrate. The term“atop” means “on the top of.”

Similarly, the terms “above” and “below” are generally used herein fordescribing the relative physical location of different devices, layers,sections, portions. etc., with respect to their shortest distances tothe semiconductor substrate. For example, a first layer “above” a secondlayer means that, when measured from the substrate at the samehorizontal level, the first layer is farther away in distance from thesubstrate than the second layer. Conversely, a first layer “below” asecond layer means that, when measured from the substrate at the samehorizontal level, the first layer is closer in distance from thesubstrate than the second layer. As used herein, “horizontal” meansparallel to the planar surface of the substrate, such as the horizontalaxis 101 illustrated in FIG. 1.

The term “immediately” or “directly” may be construed as “in physicalcontact,” as will be made apparent by the context; for example, unlesscontradictory to the context, a first layer “immediately above” or“directly above” a second layer means that the first layer is above andin physical contact with the second layer.

As used herein, “contact plug,” “contact via,” or simply “contact” for adevice refers to any substantially vertical wire between with the dopedregions for the device and the first interconnect layer for the device.The term “interconnect” refers to any substantially horizontal wirebetween devices for inter-device signal transmission/communication. The“first” interconnect layer refers to the lowest interconnect layer.Notably, with the techniques introduces here, the first interconnectlayer is device specific; that is to say, in some embodiments, the firstinterconnect for one device may be different than that for anotherdevice, even when both devices are fabricated on the same wafer.

Mesa Height Adjustment Approach During Shallow Trench IsolationFormation

FIG. 2 is a cross-sectional view of a monolithic integratedsemiconductor structure 200 incorporating one or more aspects of thedisclosed techniques. The structure 200 includes a PD device 210 and atransistor device 220. Both devices 210 and 220 are fabricated onsubstrate 202. Also shown in FIG. 2 are shallow trench isolation (STI)features 208, which are formed on the substrate 202 by performingetching before the devices 210 and 220 are fabricated, leaving mesas(e.g., mesa 204(1) and mesa 204(2)) on which devices 210 and 220 can beformed.

As mentioned above, one issue associated with the conventionalmonolithic integration of PD and transistor is the large step heightdifference between PD and transistor. Accordingly, one aspect of thetechniques introduced here includes a modified STI approach for reducingthe step height difference. More specifically, after forming the STIfeatures 208 (and their counterpart mesas) on the semiconductorsubstrate 202, an additional step is performed to adjust the relativeheight between the mesa for the photodetector 210 (e.g., mesa 204(1))and the mesa for the transistor 220 (e.g., mesa 204(2)) in order tocompensate the step height difference. This can be performed by reducingthe height of the mesa 204(1) for the photodetector 210 (e.g., viaetching the mesa 204(1)), or by increasing the height of the mesa 204(2)for the transistor 220 (e.g., via growing additional substrate materialon the mesa 204(2)). The adjusting can be performed until the topsurface of the mesa 204(1) for the photodetector 210 becomes lower thanthe top surface of the mesa 204(2) for the transistor 220 for heightcompensation.

Further, in a preferred embodiment, after the adjustment, the mesa204(1) still remains higher than the bottom surface of the isolationtrench STI 208. Depending on the field application, this may bepreferable than not having the mesa 204(1) higher than the bottom of STI208; example benefits of this preferred embodiment may include that (1)such structure provides better device isolation, especially for the PDdevice, (2) such structure provides more flexibility of controlling thePD device height, and (3) such structure reduces STI dielectric dishingduring STI chemical-mechanical polishing (CMP).

After the above mesa height adjustment, the transistor 220 and the PD210 can be fabricated on their respective mesas 204(2) and 204(1). Withthe modified STI approach introduced here, the issue of step heightdifference between PD and transistor may be reduced.

FIGS. 3A-3R are cross-sectional views showing various process steps formanufacturing the semiconductor structure 200 of FIG. 2 in accordancewith some embodiments. Note that, while these process steps that aredescribed and/or depicted as performed in a specific order, these stepsmay include more or fewer steps, which may be performed in serial or inparallel. Also, an order of two or more steps may be changed,performance of two or more steps may overlap, and two or more steps maybe combined into a single step. In addition, while the steps introducedhere may include certain details for fabricating a specific embodiment(such as structures depicted in FIGS. 2, 4A, and 6A), one or more ofthese steps may be modified to create different variations ofembodiments (such as structures depicted in FIGS. 4B, 6B, or describedin other portions here). Any obvious modification to the steps forcreating those variant embodiments introduced here is omitted forsimplicity. For example, in one variant, the height for the mesa 204(1)of the PD device 210 is reduced to the same height as the bottom of theSTI features 208, and an ordinary artisan will know how to add, remove,and/or modify the steps introduced here for fabricating such variant.Well known steps or details may be omitted for simplicity.

With reference to FIGS. 3A-3R, example process steps for manufacturingthe semiconductor structure 200 are introduced. In step 301 (FIG. 3A), astopping layer 201 is deposited on the substrate 202 for forming the STItrenches on the substrate 202. The stopping layer 201 has patterns thatdefine the STI features (and also the complementary mesa features).Then, the transistor and photodetector active areas (mesa structures204(2) and 204(1), respectively) are patterned and defined (e.g., byusing etching).

In step 302 (FIG. 3B), isolation material (e.g., oxide) 203 is depositedand polished down to stopping layer surface by CMP, thereby forming theSTI. In step 303 (FIG. 3C), a thin layer of oxide is deposited over thewafer to protect the transistor active areas (e.g., mesa 204(2)). Theoxide on top of photodetector active area is then defined by lithographyand removed. In step 304 (FIG. 3D), the photodetector's stopping layeris removed, and the height for PD substrate mesa (e.g., mesa 204(1)) isreduced. For example, the height reduction process can be done by wetchemical etch or dry etch (e.g., using chemicals with high etchingselectivity to the substrate material). The amount of height reductioncan be determined based on the height difference between transistors andphotodetectors in the design. In alternative implementations, anepitaxial growth can be performed on the mesa 204(2) to elevate itsheight. In effect, a relative height between the mesa 204(1) and themesa 204(2) is adjusted.

In step 305 (FIG. 3E), ion implantation is performed on thephotodetector active areas to define the well slabs 211. In step 306(FIG. 3F), oxide 205 is deposited over the wafer to protect thephotodetector area, followed by a CMP planarization process that ends atthe transistor's stopping layer. In step 307 (FIG. 3G), transistors(e.g., transistor 220) are formed on top of their respective mesa activeareas (e.g., mesa 204(2)). Note that step 307 marks the end of the FELLstage. In step 308 (FIG. 3H), middle-of-line oxide 207 is deposited tocover over transistors, and then planarized. In step 309 (FIG. 3I), theoxide layer on top of the photodetector active areas is removed toexpose the photodetector mesas (e.g., mesa 204(1)).

In step 310 (FIG. 3J), photosensitive material 213 is selectivelydeposited so that it is only deposited on the photodetector active area.In some implementations, the photosensitive material 213 includesgermanium, and facets can be formed during the epitaxy process near thesidewall of the mesa 204(1). In some embodiments, a buffered material212 is deposited before depositing the photosensitive material 213. Thebuffered material 212 typically is a material that is similar orequivalent to substrate material. In step 311 (FIG. 3K), a passivationlayer 215 can be formed by first depositing a blanket passivation layer,followed by top contact implantation, doping the upper region 214 of thephotosensitive layer 213 to the opposite polarity than the dopedsubstrate layer 211. Note that, in this example, the layer 214 is formedafter passivation layer formation, and therefore a portion of thepassivation layer 215 becomes doped to form at least partially the layer214. Then, in step 312 (FIG. 3L), the passivation layer 215 is patternedwith lithography and dry etching processes, leaving this passivationlayer 215 only above photosensitive material 213. As an alternative, instep 311, the upper region 214 of the photosensitive layer 213 is firstdoped to the opposite polarity than the doped substrate layer 211, andthen in step 312, the passivation layer 215 is selectively deposited sothat it is only deposited on the photosensitive material 213. The dopedupper region 214 may be defined by ion implantation or by in-situ dopingduring the epitaxy process. Thereafter, a photodetector hard mask layer209 is deposited over the entire wafer. The hard mask layer 209 can beused for patterning photodetector mesas as well as the CMP or etch backstopper at the interlayer dielectric layer planarization stage.

In step 313 (FIG. 3M), photodetector mesas are patterned with typicallithography and dry etching processes. In one or more embodiments, thereare rings 216 of photosensitive material left nearby the oxide sidewallwhen using this patterning scheme, as shown in FIG. 3M. Further, in someembodiments, the rings 216 may be removed, but note that the removalprocess may increase cost and technical difficulty, because the rings216 share similar structure and materials with the photodetector 210.Then, in step 314 (FIG. 3N), passivation spacer 217 is formed at thesidewall of the photodetector mesa 204(1). In accordance with someimplementations of this process scheme, the sidewall spacer 217 can beformed next to the photosensitive ring 216 near the oxide edge as well.In step 315 (FIG. 30), interlayer dielectric 291 is deposited to fill upthe gap between photodetector mesa and original oxide. Then,planarization is applied via etch back or CMP. In some variations, thehard mask 209 is used as the planarization stopping layer, and in someexamples, another dielectric layer can deposited on the top of the waferafterwards to ensure uniform dielectric thickness above thephotodetector mesas across the wafer for optical purposes. In someimplementations, step 313 through step 315 can be skipped, and step 316can be performed immediately after the top passivation layer formation(step 311).

In step 316 (FIG. 3P), openings 231 for contact vias of bothphotodetectors and transistors are formed. Note that, because of thevarious contact depths between the two kinds of devices, separatecontact open processes may be needed. In addition, silicide formationcan be performed during or before contact via formation to improvecontact resistance, thus improving device performance. Then, in step 317(FIG. 3Q), metal formation for both transistor contact vias 230 and PDcontact vias 240 is performed by metal deposition and CMP. In step 318(FIG. 3R), standard backend-of-line metal interconnects 250 are formed.The communication between these two types of devices (e.g., PD 210 andtransistor 220) can be achieved through the first metal layer (i.e., M1)or any layer above, in accordance with one or more embodiments.

In one or more implementations, the photo- sensitive material 213 is orincludes germanium (Ge). Example material for the substrate 202 can besilicon (Si) or silicon-on-insulator (SOI). The passivation layer 215can be amorphous-Si, poly-crystalline Si, nitride, high-k dielectric,silicon dioxide (SiO₂), or any combination thereof. In some examples,the passivation spacer 217 can be amorphous-Si, poly-crystalline Si,nitride, high-k dielectric, silicon dioxide (SiO₂) or any combinationthereof. The material for the photodetector hard mask layer 209 can benitride, and the material for the interlayer dielectric 291 can be SiO₂.The trench isolation oxide 203 can be SiO₂, and the transistors (e.g.,transistor 220) can be silicon-based transistors. The photodetectors(e.g., PD 210) can be of a normal incidence type in which the opticalsignal can be either incident from the top through the dielectric layer493 or from the bottom through the substrate 402.

In some alternative embodiments, at least a part of the semiconductormaterials used in the P-I-N structure can be different fromsemiconductor substrate material; for example, the highly doped P regionand the intrinsic region can be germanium based, and the highly doped Nregion can be silicon based (e.g., the N region being defined on thesilicon substrate). Further, in some embodiments, the intrinsicphotosensitive region of the PD 210 includes a stack of semiconductormaterials that include substrate semiconductor material with a smallerdielectric constant than the material in the intrinsic photosensitiveregion. In these embodiments, a thickness ratio between the substratesemiconductor material and other semiconductor materials in theintrinsic photosensitive region combined can be greater than 1 to 5 suchthat the effective capacitance can be reduced for higher operationspeed. In other words, in some of these embodiments having the stack ofsemiconductor materials in their photosensitive regions, the thicknessof the silicon layer in the stack is no thinner than ⅕ of the germaniumlayer in the stack in order to form a high bandwidth photodetector. Inone example, the germanium layer is 500 nm, and the silicon layer isthicker than 100 nm.

In an alternative embodiment, the photodetector mesa is at the samelevel as the bottom of the STI trenches, thereby utilizing the fullpotential of compensating the step height difference betweenphotodetectors and transistors. However, in such alternative, the deviceisolation (especially for PD devices) may not be as good as theembodiment shown in FIG. 2, and may have more oxide dielectric dishingproblems during the STI CMP process.

Transistor Via First Approach

FIG. 4A is a cross-sectional view of another monolithic integratedsemiconductor structure 400 incorporating one or more aspects of thedisclosed techniques. The structure 400 includes a PD device 410 and atransistor device 420. Both devices 410 and 420 are fabricated onsubstrate 402. Also shown in FIG. 4A are shallow trench isolation (STI)features 408, which are formed on the substrate 402 by performingetching before the devices 410 and 420 are fabricated, leaving mesas(e.g., mesa 404(1) and mesa 404(2)) on which devices 410 and 420 can beformed. The structure 400 may have transistors (e.g., transistor 420)located on one set of mesas formed specifically for the transistors, andPDs located on another set of mesas. In other implementations, the PDmesas 404(2) may optionally have lower height than transistor mesas404(1) to further compensate the step height difference between PD 420and transistor 410, as discussed above with respect to the modified STIapproach.

As mentioned above, one issue associated with the conventionalmonolithic integration of PD and transistor is the large step heightdifference between PD and transistor. It is further observed in thepresent disclosure that standard MOL process (e.g., tungsten formation)is typically used for forming contact plugs for devices because ofreliability reasons. Specifically, because transistors are forwardbiased devices, their working principle requires a relatively largeamount of electrical current to pass through. If the contact plugs forthe transistors are made of BEOL metal such as copper or aluminum, thelarge current can cause electromigration, leading to device malfunctionsand/or shorter device lifetime. Moreover, this electromigration of BEOLmetals can cause transistor characteristics degradation. Therefore, theMOL process uses refractory materials (e.g., tungsten) to form thecontact plugs for transistors. However, photodetectors, unliketransistors, are reverse biased devices, meaning that their workingprinciple does not require a large amount of current to pass throughthem.

Accordingly, one aspect of the techniques introduced here includes amodified contact via approach. In this particular approach, the contactvias for the transistors are fabricated such that they (1) havedimensions (e.g., height) that are optimized for the correspondingmanufacturing technology (which is typically manufacturer specific) forperformance purposes, and (2) adopt conventional refractory metal (e.g.,tungsten) as contact metal for reliability purposes. In contrast, thecontact vias for the PDs in this approach are fabricated during theback-end-of-line (BEOL) process and, in some embodiment, using BEOLinterconnect metals, such as copper (Cu) or aluminum (Al) for forming atleast a part of the PD contact plugs. Specifically, in some embodiments,transistors are first fabricated until the process in which their MOLcontact vias (e.g., contact vias 430) are formed. The main body of thePDs are then fabricated. Thereafter, the PD contact vias (e.g., contactvias 440) are formed during the formation of BEOL interconnect metallayers (e.g., M1 layer). That is to say, as is described further belowwith respect to FIGS. 5A-5Q, the transistors are first formed on thesemiconductor substrate during a front-end-of-line (FEOL) fabricationstage. Then, during a middle-of-line (MOL) fabrication stage and beforethe photodetectors are formed on the semiconductor substrate, contactplugs for the transistors are formed by using refractory materials.Next, the photodetectors are formed on the semiconductor substrate.Thereafter, contact plugs for the photodetectors are formed during aback-end-of-line (BEOL) fabrication stage.

This structure 400 introduced here further provides a way to resolve thestep height issue as discussed above with respect to FIG. 1.Advantageously, this modified via formation approach removes therequirement of contacting both types of devices with the same MOL metallayer, thereby removing all the problems associated with suchrequirement. As observed herein, because PDs are operated under reversebias with very low output current, there is little or noelectromigration concerns using this modified contact via approach.Also, the mesa adjustment technique discussed above with respect to FIG.2 can be optionally combined with this modified contact via approach.Benefits from combining the mesa adjustment technique include, forexample, providing more complete protection on PD active area bydielectric during the transistor fabrication processes, and providingadditional step height compensation for the two kinds of devices.

FIG. 4B is a cross-sectional view of a monolithic integratedsemiconductor structure 401 that is a variant of the structure 400 shownin FIG. 4A. The structure 401 shares similar design concepts as thestructure 400, but with a different PD metal contact formation. Insteadof using the first BEOL metal layer (i.e., M1) to form both the top andbottom contacts for the PD, this structure 401 uses the first BEOL metallayer (M1) to form the contact vias 441 that contact the bottomelectrode and another metal layer above (e.g., the second BEOL metallayer (M2)) to form the contact vias 442 that contact the top electrode.This variant can be adopted for situations in which the step heightdifference between the PD and the transistor is too large for using onlythe first BEOL metal layer for height compensation.

FIGS. 5A-5Q are cross-sectional views showing various process steps formanufacturing the semiconductor structure of FIG. 4A in accordance withsome embodiments. Note that, while these process steps that aredescribed and/or depicted as performed in a specific order, these stepsmay include more or fewer steps, which may be performed in serial or inparallel. Also, an order of two or more steps may be changed,performance of two or more steps may overlap, and two or more steps maybe combined into a single step. One or more of these steps may bemodified to create different variations of embodiments. Well known stepsor details may be omitted for simplicity.

With reference to FIGS. 5A-5Q, example process steps for manufacturingthe semiconductor structure 400 are introduced. In step 501 (FIG. 5A),the transistor active areas (e.g., mesa 404(2)) and PD active areas(e.g., mesa 404(1)) are defined and patterned on substrate 402 bystandard shallow trench isolation (STI) processes. In step 502 (FIG.5B), PD active areas (e.g., mesa 404(1)) are opened and may beoptionally recessed (e.g., for step height compensation). The upperregion of the mesa 404(1) is then doped to one electrical polarity viaion implantation, thereby forming the bottom doped layer 411 for PD 410.In step 503 (FIG. 5C), dielectric material 405 (e.g., oxide) isdeposited on the wafer, covering the devices, and then the wafer isplanarized (e.g., by using chemical-mechanical polishing (CMP)processes). Preferably, the polishing process should stop on therelatively higher transistor mesas(e.g., mesa 404(2)), leaving the PDactive areas (e.g., mesa 404(1)) remain protected by dielectric 405during the following transistor fabrication steps.

In step 504 (FIG. 5D), components for front-end-of-line (FEOL)transistors (e.g., transistor 420) are formed on top of their respectivemesa active areas (e.g., mesa 404(2)). In step 505 (FIG. 5E), MOLdielectric 407 is deposited to cover the transistors on the wafer, andthen the wafer is planarized. In step 506 (FIG. 5F), transistor contactvias 430 are formed with standard MOL refractory metal (e.g., tungsten).

In step 507 (FIG. 5G), dielectric material 409 is deposited to fullycover and protect the MOL metals. In step 508 (FIG. 5H), the dielectriclayer on top of the PD active areas (e.g., mesa 404(1)) is removed toexpose (or “open”) at least a part of the PD active areas. In someimplementations, the area created by the opening may be larger than thefinal PD area to obtain a relatively flat surface on the top of the PDwhile removing one or more facet areas near the sidewall of the opening(e.g., facets 960 such as shown by FIG. 9B). As is described below, suchfacet areas can be formed during selective epitaxial growth processes.In step 509 (FIG. 5I), photosensitive material 413 is selectivelydeposited such that it is only or at least mostly deposited on the PDactive area. Optionally, a buffered material 412 is deposited firstbefore photosensitive material deposition. The buffered material 412 canbe a material similar or equivalent to the substrate material. In step510 (FIG. 5J), the upper region of the photosensitive layer is doped tothe opposite polarity than the doped substrate layer to form the topdoped region 414, thereby altogether forming a P-I-N photodetectorstructure 410. This top doped region 414 may be defined by, for example,ion implantation or in-situ doping during the epitaxy processes.

In step 511 (FIG. 5K), a passivation layer 415 is selectively depositedsuch that it is only deposited on the photosensitive material 413. Inother implementations, the layer 415 can be formed by first depositing ablanket passivation layer and then being patterned with lithography anddry etching processes, leaving this passivation layer 415 only above thephotosensitive material 413. In yet another implementation, the layer414 can be formed after the passivation layer formation. A PD hard masklayer 409 is then deposited over the wafer. The hard mask layer 409 canbe used for patterning photodetector mesas as well as the CMP or etchback stopper at the interlayer dielectric layer planarization stage.

In step 512 (FIG. 5L), photodetector mesas are patterned with typicallithography and dry etching processes. In some embodiments, there may beresidual photosensitive material left nearby the oxide sidewall, formingrings 416, when using this patterning scheme, as shown in FIG. 5L. Instep 513 (FIG. 5M), passivation spacer 417 is then formed at thesidewall of the PD mesa 404(1). According to some implementations ofthis process scheme, the sidewall spacer 417 can be formed next to thephotosensitive ring 417 near the oxide edge as well. In step 514 (FIG.5N), interlayer dielectric 491 is deposited to fill up the recessed areaformed by the previous etching process. Planarization is then appliedvia etch back or CMP, which is to stop at the PD hard mask 409. In step515 (FIG. 50), another dielectric layer 493 can be deposited on the topof the wafer afterwards to ensure uniform dielectric thickness above thePD mesas across the wafer for optical purpose. In some implementations,one or more portions of step 512 through step 514 can be skipped, andstep 515 can be performed immediately after the top passivation layerformation (step 512).

In step 516 (FIG. 5P), openings 431 are opened for building the firstback-end-of-line metal layer (M1) contact vias. Specifically, theopenings in the PD area are to form the PD's contact vias 440. Notably,the openings in transistor area can form additional contact vias thatconnect the already formed MOL contact vias 430 and/or serve as localinterconnects for inter-transistor signal transfer. In one or moreexamples, in order to create various contact depths for the two kinds ofdevices, the openings for the PDs are patterned separately from theopenings for the transistors. The openings 431 are then filled with BEOLmetal (e.g., copper) in step 517 (FIG. 5Q) by metal deposition, followedby CMP. In some implementations, silicide formation can be performed inPD fabrication during or before PD contact formation (e.g., step 516) toimprove contact resistance, thereby improving device performance. The PDsilicide formation process and the materials used may be different thanthe transistor silicide formation process.

Although not illustrated in FIG. 5P for simplicity, one or more linersmay be deposited over openings 431 before the BEOL metal deposition.These liners function as diffusion barriers for the BEOL metals, such ascopper or aluminum. Typical materials for the liners can includetitanium (Ti), titanium nitride (TiN), titanium tungsten (TiW), tantalum(Ta), tantalum nitride (TaN), and so forth. The thickness of the linersis fabrication technology dependent but typically very thin; forexample, for 65 nm technology nodes, the liners for the contact plugsmay be about 2 to 10 nm thick. It is noted that, for purposes ofdiscussion herein, especially with regard to the materials used for thecontact plugs, these liners are not considered as any part of thecontact plugs.

In one or more implementations, the photosensitive material 413 can beGe. Example materials for the substrate 402 can be Si or SOI. Thepassivation layer 415 can be amorphous-Si, poly-crystalline Si, nitride,high-k dielectric, silicon dioxide (SiO₂), or any combination thereof.The passivation spacer 417 can be amorphous-Si, poly-crystalline Si,nitride. high-k dielectric, SiO₂, or any combination thereof. Thematerial for the PD hard mask layer 409 can be nitride, and the materialfor the interlayer dielectric 491 can be SiO₂. The trench isolationdielectric can be SiO₂, and the transistors (e.g., transistor 420) canbe silicon-based transistors. The photodetectors (e.g., PD 410) can beof a normal incidence type. The optical signal for the normal incidencetype PD can be either incident from the top through the dielectric layer493 or from the bottom through the substrate 402.

Multiple Absorption Layer Approach

FIG. 6A is a cross-sectional view of yet another monolithic integratedsemiconductor structure 600 incorporating one or more aspects of thedisclosed techniques. The structure 600 includes a PD device 610 and atransistor device 620. Both devices 610 and 620 are fabricated onsubstrate 602. Also shown in FIG. 6A are shallow trench isolation (STI)features 608, which are formed on the substrate 602 by performingetching before the devices 610 and 620 are fabricated, leaving mesas(e.g., mesa 604(1) and mesa 604(2)) on which devices 610 and 620 can beformed. Note that other forms of isolation techniques including, forexample, bipolar junction isolation (e.g., by implanting opposite typesof dopant at the transistor and PD boundary) may be used.

Recall that, among the issues associated with monolithic integration ofPD and transistor, one issue is the extra thermal requirement that isplaced on the CMOS FET devices when they are fabricated alongside withPD devices, exposing the FET devices to PD related processes. Morespecifically, high speed PDs are typically made out of photosensitivematerials, such as Ge, GaAs, and InGaAs, that are not stable at certainCMOS FET's FEOL process temperatures. On the other hand, the epitaxialtemperature of PD photosensitive materials is generally higher than thetolerance temperature of BEOL metals. These temperature constraint andstep height limitation have made it very difficult to choose anappropriate insertion point for the photosensitive materials during themonolithic integration process.

Accordingly, one aspect of the techniques introduced here includes amodified photosensitive material formation approach that resolves orreduces both the temperature constraint and the step height limitationissues simultaneously. This particular approach achieves this bysplitting the typical one-step photosensitive material heteroepitaxyprocess into multiple discrete epitaxial steps. Perhaps moreimportantly, it is observed that performing a homoepitaxialphotosensitive material growing process can be more controllable thanperforming a heteroepitaxial one. More specifically, because of thegeneral absence of lattice mismatch in a homoepitaxial process, thecrystal nucleation involved in such process becomes easier and theresulting surface becomes smoother, requiring less annealing process toimprove the crystal quality. Therefore, the thermal budget forperforming a homoepitaxial photosensitive material growing process canbe lower than that for performing a heteroepitaxial one. It may also betrue that the photosensitive material has a lower melting point thanthat of the substrate material, which can place another processconstraint limiting those designs that invoke a heteroepitaxial processof growing photosensitive materials on a silicon-based substrate. Afterseparating the photosensitive material epitaxy process into multiplesteps, only the first epitaxy step may be heteroepitaxial and allsubsequent steps can become homoepitaxial, and therefore at least a partof the processes for fabricating the transistors can now be performed inbetween the multiple discrete epitaxial steps for growing thephotosensitive material. This technique removes the conventional,inherent height and/or thermal limitations placed by the BEOLinterconnect metal layers. Note that, for purposes of discussion herein,a substantially homoepitaxial process, such as growing germanium (Ge) onsilicon-germanium (SiGe) alloy, is treated as a homoepitaxial process,because in such process of growing a substantially same material on thetop of another can still result in similar benefits (e.g., lowerprocessing temperature) to an homoeitaxial process introduced here.

At least in some embodiments, a first layer (also referred to herein asthe “seed layer”) of photosensitive material of the photodetector can beepitaxially grown on a semiconductor substrate, over an area where thephotodetector is to be formed. After said seed layer of photosensitivematerial is grown, at least one layer of metallic contact plugs for thetransistor can be formed. Then, after said metallic contact plugs forthe transistor are formed, a subsequent layer of photosensitive materialcan be formed to complete the fabrication of the photodetector's lightabsorption region. The subsequent layer of photosensitive material canbe formed on the top of the seed layer, such that the layers ofphotosensitive material can form the light absorption region for thephotodetector. By avoiding a single step epitaxy process for thephotosensitive material, this approach can advantageously reduce orminimize the issues of step height difference and additional thermalbudget during monolithic integration of PD and transistor devices.

As illustrated in FIG. 6A, the photosensitive region 613 is separatedinto two layers 613(1) and 613(2). The two layers 613(2) and 613(2) areepitaxially grown in separated stages during the manufacturing processbut jointly form a continuous photosensitive region. The first layer613(1) is a relatively thin, seed layer that generally requires a hightemperature surface cleaning process (e.g., 750-850 degrees Celsius.also known as “prebake”) before epitaxial growth. This seed layer 613(1)can be inserted at a relatively early stage of the process. Because theseed layer 613(1) can be very thin (e.g., 10 nm), this seed layer growthwould not face the step height issue as discussed above. As is discussedin detail below with respect to FIGS. 7A-7J, the seed layer 613(1) canthen be covered by dielectric, and the fabrication process continueswith FET building. The rest of the photosensitive material 613(2) isgrown at a subsequent epitaxy step with a much flexible insertion point.As introduced above, since this subsequent growth is homogeneousepitaxy, no high temperature surface cleaning is necessary at thesubsequent growth. The process temperature can be much lower than thefirst growth, and therefore the subsequent growth step can be insertedat a later part of the FET fabrication process. The final height of thePD is only limited by the insertion point of the subsequent growth, notthe initial growth. In this way, the top surface of the light absorptionregion of the photodetector can be higher than the bottom of the metalinterconnect layers for the transistor, which may be impossible in thetraditional, single-step epitaxy process.

FIGS. 6A-6C demonstrate how different insertion point scenarios canresult in different PD heights. In FIG. 6A, the insertion point is setafter Backend-Of-Line (BEOL) Metal 1 (M1) dielectric layers are formed,and thus in structure 600, the PD height can be as high as the topsurface of M1 dielectric layer. In comparison, in FIG. 6B, the insertionpoint is set after middle-of-line dielectric (MOL) layer is formed, andtherefore in structure 601 a, the PD height may be as tall as the MOLdielectric layer. In FIG. 6C, the insertion point is set before the MOLdialectic layer is formed, and therefore in structure 601 b, the PDheight is shorter than the MOL dielectric layer.

Note that, because this particular technique forms the photosensitiveregion at two or more different stages, the technique inherentlyrequires separate lithography and patterning processes. Therefore, ifwithout further processing afterwards, the sidewalls of the interfacebetween the first seed layer and the subsequent growth layer areexpected to have at least some physical discontinuity, notwithstandingboth layers target the same lateral pattern. This discontinuity isbecause of imperfection of lithography alignment in real practice. Thatis to say, the light absorption region of the photodetector may exhibita physical structure that has a sidewall misalignment (or adiscontinuous sidewall), which is a manifestation of two or moreseparate material forming processes growing the same photosensitivematerial.

Additionally or alternatively, the photosensitive material can bepatterned after the multi-step deposition, and in some embodiments,covered with another passivation layer. With this extra patterning step,the aforesaid physical discontinuity between first seed layer and secondepitaxial layer may be removed.

In some embodiments, the photosensitive layer forming process can beseparated into more than two steps. Also, using the introducedtechnique, the last epitaxial insertion point can be set later such thatthe PD height can become higher than at least Ml, assuming that the laststep of epitaxial growth and the following highly-doped layer formationprocess is BEOL tolerable.

Similar approach can also be applied on waveguide-based bulk-coupled PDsintegrated with CMOS FETs. This approach is particularly beneficial whenapplied to waveguide-based PDs being integrated with advance technologynode CMOS FETs because this scenario tends to be more sensitive to stepheight difference and thermal budgets. Note that a silicon-on-insulator(SOI) substrate can be suitable for this application scenario becausethe integrated components may include silicon waveguides.

With this technique, the height of PDs can become taller than what islimited by conventional methods without causing FET performance penalty.Thus, this multiple step epitaxy approach can resolve or mitigate thestep height difference issue.

FIGS. 7A-7J are cross-sectional views showing various process steps formanufacturing the semiconductor structure of FIG. 6A in accordance withsome embodiments. Note that, while these process steps that aredescribed and/or depicted as performed in a specific order, these stepsmay include more or fewer steps, which may be performed in serial or inparallel. Also, an order of two or more steps may be changed,performance of two or more steps may overlap, and two or more steps maybe combined into a single step. One or more of these steps may bemodified to create different variations of embodiments. Well known stepsor details may be omitted for simplicity.

With reference to FIGS. 7A-7J, example process steps for manufacturingthe semiconductor structure 600 are introduced. In step 701 (FIG. 7A),the FET active area 604(2) and the PD active area 604(1) are defined andpatterned on substrate 602 by, for example, using a standard shallowtrench isolation (STI) process. Such process fills isolation material603 (e.g., oxide) into the trenches to form STI features 608. In step702 (FIG. 7B), PD active area 604(1) are first opened and then doped toone electrical polarity via ion implantation, thereby forming the bottomdoped layer 611 for PD 610. Then, area 604(1) is covered again withdielectric material 605.

In step 703 (FIG. 70), front-end-of-line (FELL) transistor components620 are formed on top of the transistor active area 604(2) while PDactive area 604(1) are covered with the dielectric layer. In step 704(FIG. 70), the PD active area 604(1) is opened again, and the seed layer613(1) of photosensitive material is heteroepitaxially grown on the PDactive areas. The thickness of the seed layer 613(1) can be in the rangeof 5 nm to 500 nm, depending on the technology of the FET nodes beingintegrated. In step 705 (FIG. 7E), standard MOL dielectric 607 isdeposited over the wafer to cover both types of devices. Then, the waferis planarized, which is followed by FETs contact metal formation to formFET contact vias 630. Thereafter, BELL M1 dielectric layer 693 isdeposited over the MOL layer.

In step 706 (FIG. 7F), the dielectric layers on top of PD active area604(1) are opened, and a subsequent photosensitive material epitaxialgrowth is performed to form the second photosensitive layer 613(2).Then, the upper region of the photosensitive layer 613 is doped to theopposite polarity than the doped substrate layer by ion implant orin-situ doping to form the top doped layer 614, thereby altogetherforming a P-I-N photodetector structure 610. Next, the top passivationlayer 615 is selectively deposited on the photosensitive material 613,and a hard mask layer 609 is then deposited over the wafer. In otherimplementations, the layer 615 can be formed by first depositing ablanket passivation layer and then being patterned with lithography anddry etching processes, leaving this passivation layer 615 only above thephotosensitive material 613. In yet another implementation, the layer614 can be formed after the passivation layer formation.

In step 707 (FIG. 7G), the PD mesa 604(1) is patterned and then coveredwith passivation spacer 617 on the sidewalls. In step 708 (FIG. 7H), thegaps between PD mesa 604(1) and dielectric layers (which are resultedfrom previous patterning) are filled by another dielectric deposition691. Then, a planarization process is performed, which stops on the PDhard mask 609. In step 709 (FIG. 7I), the PD bottom metal contacts 640are formed, followed by M1 metal interconnect formation 650. In Step710, M2 dielectric layers 693 are deposited, followed by PD top metalcontacts formation 641 and M2 metal interconnect formation 660.Depending on the design, interconnect metal formation can be used forforming additional contact vias and/or for communication among devices.In some implementations, parts of step 706 through step 708 can beskipped, and step 709 can be performed immediately after the toppassivation layer formation (step 706). In some implementations, the PDbottom contact formation (step 709) and top contact formation (step 710)can be performed on the same BEOL dielectric layer but in separatepatterning processes due to their different end points. In someimplementations, silicide formation can be introduced in PD fabricationduring or before PD contact formation (e.g., steps 709 and 710) toimprove contact resistance, thereby improving device performance.

In one or more implementations, the photosensitive material 613 can beGe. Example materials for the substrate 602 can be Si or SOI. Thepassivation layer 615 can be amorphous-Si, poly-crystalline Si, nitride,high-k dielectric (e.g., aluminum oxide (Al₂O₃), hafnium oxide (HfO₂)),SiO₂, or any combination thereof. The passivation spacer 617 can beamorphous-Si, poly-crystalline Si, nitride, high-k dielectric (e.g.,l₂O₃, HfO₂), SiO₂, or any combination thereof. The material for the PDhard mask layer 609 can be nitride, and the material for the interlayerdielectric 691 can be SiO₂. The trench isolation dielectric 603 can beSiO₂, and the transistors (e.g., transistor 620) can be silicon-basedtransistors. The photodetectors (e.g., PD 610) can be of a normalincidence type in which the optical signal can either incident from thetop through the dielectric layer 693 or from the bottom through thesubstrate 602.

Recited here is an alternative description of the multiple absorptionlayer approach introduced above with regard to FIGS. 7A-7J. Thisalternative description is for providing additional completeness and forfurther enabling the understanding of various benefits in practicingsuch approach.

Some embodiments of the multiple absorption layer approach include amethod for fabricating a photodetector and a transistor on the samesemiconductor substrate, with silicon as the top surface of thesubstrate. The method generally includes 5 steps. Step (1): forming atleast a part of the transistor before its contact via formation. Step(2): forming the first light absorption layer of the photodetector on afirst selected area on the top of the substrate. Step (3): forming anisolation layer on the top of the first light absorption layer. Step(4): removing a part of the isolation layer to expose a second selectedarea of the first light absorption layer. The second selected area is atleast partially overlapping with the first selected area. And, step (5):forming a second light absorption layer directly on the top of theexposed first light absorption layer. The second light absorption layercan be formed such that the two layers form a single light absorptionregion for the photodetector. As such, the photodetector can be formedwith a thicker combined absorption layer for higher quantum efficiencyand higher bandwidth, without being limited by the step height andthermal constraint during traditional fabrication processes. Optionally,additional light absorption layers can be formed after step (5) byrepeating step (3), step (4), and step (5).

The single light absorption region may have a sidewall misalignmentbetween the first selected area and the second selected area. Thesidewall misalignment may be an intentional or unintentional result ofseparate lithography and etching steps. Also, as a result of the aboveapproach, in some embodiments, a top surface of the second lightabsorption layer is higher than the top surface of the contact vias forthe transistor.

According to one or more implementations, the first light absorption andsecond light absorption layers both include germanium. A first prebakecan be performed before the step (2) to clean up the heterogeneousinterface. Similarly, a second prebake can be performed before the step(5) to clean up the homogeneous interface. A higher temperature may beused during the first prebake than the second prebake since the firstprebake is performed without involving any MOL and BEOL processes.Notably, a higher prebake temperature may be preferable forheterogeneously growing Ge (e.g., on Si) than homogeneously growing Ge(e.g., on Ge), because the naturally formed passivation layer on Sisurface during fabrication processes may require higher temperature toremove than removing the naturally formed passivation layer (e.g., GeOor GeO₂) on Ge surface.

In some embodiments, the first light absorption layer includesgermanium, and a prebake temperature above 700 degrees Celsius isperformed before step (2) to clean up the interface between germaniumand silicon. In some embodiments, the second light absorption layerincludes germanium, and a prebake temperature lower than 700 degreesCelsius is performed before step (5) to clean up the homogeneousinterface.

Additionally, the first selected area can be smaller than the secondselected area such that any fabrication defect can be at least partiallyconfined in the first selected area. In other embodiments where defectsare not a primary concern, the first selected area is not smaller thanthe second selected area.

In a number of examples, a relative height difference between the topsurfaces of photodetector and transistor active areas is formed beforestep (1). One or more embodiments provide that the photodetector andtransistor share at least one doping region on the substrate. Further,in some examples, the combined height of the light absorption region(from the multiple layers) is higher than the bottom surface of firstmetal interconnect layer for the transistor.

In variations, before step (2), a spacer can be formed on the sidewallof the first selected area such that the sidewall of the firstabsorption layer can be passivated by the spacer. The spacer can beintrinsic amorphous silicon, doped amorphous silicon, oxide, nitride,and/or high-k dielectric materials, such that a selective epitaxialgrowth can be used during step (2) to have layers primarily grown onlyon the exposed first selected area instead of the spacer.

Additionally or alternatively, before step (5), a spacer can be formedon the sidewall of the second selected area such that the sidewall ofthe second absorption layer can be passivated by the spacer. The spacercan also be intrinsic amorphous silicon, doped amorphous silicon, oxide,nitride, and/or high-k dielectric materials, such that a selectiveepitaxial growth can be used during step (5) to have layers primarilygrown only on the exposed second selected area instead of the spacer orthe passivation layer.

Note that, according to some aspects, the remaining active areas of thetransistor are formed before step (4), leaving contact vias for thephotodetector to be formed after step (4). For example, the via contactformation for the photodetector can be performed during the formation ofmetal interconnect layers. In some cases, The photodetector's contactvias are entirely made of non-refractory materials (e.g., BEOL metalssuch as aluminum or copper) from metal interconnect layers.

Fill Shapes

FIGS. 8A-8B are a top view and a cross-sectional view of a monolithicintegrated semiconductor structure including different sizes of fillshapes for PD and transistor, and more specifically, a fill shape 810that is about a size of a PD, and a fill shape 820 that is about a sizeof a transistor.

In particular, it is observed that, with the monolithic integration ofPD and transistor, two kinds of devices that are much different in size(e.g., a transistor being less than half of the size of a PD) arefabricated on the same wafer. Further, when the wafer is manufactured,there are a number of fabrication processes that involve material growth(e.g., photosensitive material epitaxy) and material removal (e.g., CMPplanarization, or reactive ion etching), an ideal situation of whichshould exert a uniform loading on the wafer. However, in reality, theresults of these processes are affected by the pattern alreadyfabricated on the wafer. Because the different sizes of PD andtransistor, the loading on some portions of the wafer may be larger thansome other portions, which may adversely impact the yield.

Accordingly, in one aspect of the disclosure, the device layout isdefined such that, besides the photodetector and transistor activeareas, the layout can include at least two different types of fillshapes-photodetector fill shapes 810 and transistor fill shapes 820. Asillustrated in FIG. 8B, each type of fill shape carries the same processflow as its corresponding active device, except that it is notelectrically connected to any other device, thereby acting as a dummydevice.

The main purpose of inserting two different fill shapes on the wafer isto promote uniform process loading across the wafer for both types ofdevices. As such, according to at least some embodiments, each type offill shape should reach substantially the same height as theirrespective active devices in order to achieve the purposes of uniformloading. For example, the example fill shapes 810 and 820 are based onthe fabrication process flow discussed above with respect to FIG. 2,which has different mesa heights for PDs and transistors. In suchexample, the transistor fill shape 820 should be formed on a surface(e.g., mesa 404(2)) that is at the same height as other “real”transistors. Similarly, the photodetector fill shape 810 in such exampleshould be formed on a surface (e.g., mesa 404(1) that is at the sameheight as other “real” photodetectors. Depending on the embodiment, thesize and density of the shapes can be different. In some examples, thephotodetector fill shapes can be larger and less dense.

Applicable Photodetector Formation Methodology

FIGS. 9A and 9B are cross-section views of additional photodetector (PD)formation methodologies to which one or more aspects of the monolithicintegration techniques introduced here may be applied. The example PDformation methodology introduced above generally involves selectiveepitaxy, followed by PD active area patterning (e.g., via lithographyand dry etch). Nonetheless, the monolithic integration techniquesintroduced here can be suitable for other types of PD formationmethodologies as well. At least two additional PD formationmethodologies are applicable, which are respectively shown in FIG. 9Aand FIG. 9B.

In FIG. 9A, the selective growth area is directly used as the PD activearea, and therefore no additional PD active area patterning is requiredafter the selective epitaxy process. Instead, a CMP process can beperformed to planarize the surface. Then, a passivation layer isdeposited on the top of the photosensitive material to cover thephotosensitive material's top surface. One of the benefits of thisformation methodology is to reduce the process complexity associatedwith PD active area patterning and the following gapfilling/planarization step.

Another applicable PD formation methodology is shown in FIG. 9B. In thisformation methodology, the selective growth area is also directly usedas the PD active area. The difference between the methodologies in FIG.9A and FIG. 9B lies in the post-epitaxy CMP process. In FIG. 9B, the CMPprocess in FIG. 9A is skipped, and the photosensitive material stillretains its facet sidewall. The benefit of this methodology is to avoidthe CMP dishing issue that may be present in the methodology of FIG. 9A,especially when such CMP process is performed for relatively large areaPDs (e.g., diameter larger than 10 μm) where surface dishing can formduring the CMP process. Note that, in some examples of this CMP-lessformation process, the selective growth area may also be larger than thePD active area, and an etching process similar to what is shown in FIG.5L can be performed to remove the facets on the sides.

CONCLUSION

Unless contrary to physical possibility, it is envisioned that (i) themethods/steps described above may be performed in any sequence and/or inany combination, and that (ii) the components of respective embodimentsmay be combined in any manner.

Note that any and all of the embodiments described above can be combinedwith each other, except to the extent that it may be stated otherwiseabove or to the extent that any such embodiments might be mutuallyexclusive in function and/or structure.

Although the present disclosure has been described with reference tospecific exemplary embodiments, it will be recognized that the inventionis not limited to the embodiments described, but can be practiced withmodification and alteration within the spirit and scope of the appendedclaims. For example, while two contact vias are shown for each dopedarea of one or more structures in this disclosure, a single continuouscontact via or a ring/spur shaped via can be formed for the doped areasto extract photo-generated carriers from the light absorption region.Accordingly, the specification and drawings are to be regarded in anillustrative sense rather than a restrictive sense.

Examples of Certain Embodiments

To summarize, therefore, some example implementations of the disclosedtechniques introduced herein are as recited in the following numberedclauses:

(A) for the mesa height adjustment approach during STI formation:

-   1. A method for fabricating a photodetector and a transistor on a    same semiconductor substrate, the method comprising:

forming, on a semiconductor substrate, a structure having two mesas, onemesa for the transistor and one mesa for the photodetector, wherein amesa groove between the two mesas forms an isolation trench, and whereinthe two mesas are of a same height;

adjusting a relative height between the mesa for the photodetector andthe mesa for the transistor; and

forming the transistor and the photodetector on respective mesas.

-   2. The method of clause 1, wherein said adjusting the relative    height comprises:

reducing a height of the mesa for the photodetector until a top surfaceof the mesa for the photodetector is lower than a top surface of themesa for the transistor but higher than a bottom surface of theisolation trench.

-   3. The method of clause 2, wherein said reducing the height of the    mesa for the photodetector comprises:

depositing a protection layer over the mesa for the transistor forprotection against etching; and

etching the semiconductor substrate to remove substrate material in themesa for the photodetector to reduce the height of the mesa for thephotodetector.

-   4. The method of clause 1, wherein said adjusting the relative    height comprises:

increasing a height of the mesa for the transistor by epitaxial growth.

-   5. The method of clause 1, wherein said forming the structure having    two mesas comprises:

depositing a stopping layer, with patterns defining the two mesas, overthe semiconductor substrate; and

etching the semiconductor substrate to create the structure having thetwo mesas.

-   6. The method of clause 1, further comprising:

depositing isolation oxide in the mesa groove to form the isolationtrench.

-   7. The method of clause 6, wherein the isolation dielectric material    comprises silicon oxide or silicon nitride or a combination thereof.-   8. The method of clause 1, further comprising:

forming, on the semiconductor substrate, dummy fill shapes of at leasttwo sizes at suitable locations for uniform process loading across awafer during a subsequent epitaxial growth or a subsequent materialremoval process, wherein one size of the dummy fill shape dedicated forthe transistor, and wherein another size of the dummy fill shapededicated for the photodetector.

-   9. The method of clause 8, wherein the subsequent material removal    process includes at least one of: a chemical mechanical polishing    process, or a reactive ion etching process.-   10. The method of clause 1, wherein the photodetector is a    silicon-based germanium photodetector, and wherein the transistor is    a silicon-based metal-oxide-semiconductor field-effect transistor    (MOSFET).-   11. The method of clause 1, wherein the photodetector is a normal    incidence type.-   12. A device comprising:

a semiconductor substrate including a first surface, a second surface,and a third surface;

a semiconductor transistor formed on the second surface higher than thefirst surface; and

a semiconductor photodetector formed on the third surface higher thanthe first surface but lower than the second surface, wherein the firstsurface, being lower than both the second and the third surfaces, formsan isolation trench between the semiconductor photodetector andsemiconductor transistor.

-   13. The device of clause 12, wherein a resulting height of the    semiconductor photodetector is lower than a bottom surface of a    lowest layer of metal interconnects for the semiconductor    transistor.-   14. The device of clause 12, wherein the semiconductor photodetector    is formed at a different horizontal location on said semiconductor    substrate than the semiconductor transistor.-   15. The device of clause 12, wherein the semiconductor photodetector    and the semiconductor transistor are formed on two separate mesas,    one mesa for the transistor and one mesa for the photodetector, and    wherein a mesa groove between the two mesas forms an isolation    trench.-   16. The device of clause 15, wherein the isolation trench is filled    by at least one or more of: oxide-based dielectric materials, or    nitride-based dielectric materials.-   17. The device of clause 12, wherein the photodetector includes a    P-I-N structure having a highly-doped p-type semiconductor region, a    highly-doped n-type semiconductor region, and an intrinsic    photosensitive semiconductor region located between said p-type and    n-type semiconductor regions.-   18. The device of clause 17, wherein semiconductor materials used in    at least a part of the P-I-N structure are different from    semiconductor substrate material.-   19. The device of clause 17, wherein the intrinsic photosensitive    semiconductor region comprises a stack of semiconductor materials    including substrate semiconductor material with a first dielectric    constant and a photosensitive material with a second dielectric    constant, the second dielectric constant higher than the first    dielectric constant.-   20. The device of clause 19, wherein a thickness ratio between the    substrate semiconductor material and other semiconductor materials    in the intrinsic photosensitive semiconductor region combined is    greater than 1 to 5.-   21. The device of clause 12, further comprising:

a select number of dummy fill shapes about a size of the transistor,wherein the dummy fill shapes of the size of the transistor are formedon a surface that is at a same height as the second surface.

-   22. The device of clause 12, further comprising:

a select number of dummy fill shapes about a size of the photodetector,wherein the dummy fill shapes of the size of the photodetector areformed on a surface that is at the same height as the third surface.

-   23. The device of clause 12, wherein the photodetector is a    silicon-based germanium photodetector, and wherein the transistor is    a silicon-based metal-oxide-semiconductor field-effect transistor    (MOSFET).-   24. The device of clause 12, wherein the photodetector includes a    mirror structure for reducing a thickness of a light absorption    region of the photodetector.

(B) for the transistor via first approach:

-   1. A method for fabricating a photodetector and a transistor on a    same semiconductor substrate, the method comprising:

(1) during a front-end-of-line (FEOL) fabrication stage, forming thetransistor on a semiconductor substrate;

(2) during a middle-of-line (MOL) fabrication stage and before thephotodetector is formed on the semiconductor substrate, forming contactplugs for the transistor by using refractory materials;

(3) forming the photodetector on the semiconductor substrate; and

(4) only during an back-end-of-line (BEOL) fabrication stage, formingcontact plugs for the photodetector.

-   2. The method of clause 1, wherein said contact plugs for the    photodetector are formed by using non-refractory materials.-   3. The method of clause 1, further comprising:

during said BEOL fabrication stage, forming additional contact plugs onsaid contact plugs for the transistor, wherein the additional contactplugs for the transistor are to (a) be electrically connected to saidformed contact plugs for the transistor and (b) reach a same height asthe contact plugs for the photodetector.

-   4. The method of clause 3, wherein a portion of the additional    contact plugs is configured as interconnects that provide    inter-device signal transfer for the transistor.-   5. The method of clause 1, wherein said forming contact plugs for    the photodetector comprises:

in a first step during the BEOL fabrication stage, forming a first setof contact plugs for the photodetector by using a first metal material;and

in a subsequent step during the BEOL fabrication stage, forming a secondset of contact plugs for the photodetector by using a second metalmaterial,

wherein the first and second sets of contact plugs are for differentdoped regions of the photodetector.

-   6. The method of clause 1, further comprising:

before said forming the transistor, forming a structure having a mesafor the transistor and a mesa for the photodetector; and

adjusting a relative height between the mesa for the photodetector andthe mesa for the transistor until a top surface of the mesa for thephotodetector is lower than a top surface of the mesa for thetransistor.

-   7. The method of clause 1, wherein said contact plugs for the    transistor are the first metal directly contacting the formed    transistor, and wherein said contact plugs for the transistor are    formed in arrays of pillars or bars.-   8. The method of clause 1, wherein said MOL stage further comprises:

depositing a dielectric layer that is the first dielectric layercovering the transistor.

-   9. The method of clause 1, wherein said contact plugs for the    transistor are formed to be entirely below a bottom surface of a    first interconnect layer for the transistor and are positioned to be    electrically coupled with at least one of: the transistor's gate    area, the transistor's source area, or the transistor's drain area.-   10. The method of clause 9, wherein a first group of said contact    plugs for the photodetector are formed to be entirely below a bottom    surface of a first interconnect layer for the photodetector and are    positioned to be electrically coupled with a first doped region of    the photodetector.-   11. The method of clause 10, wherein a second group of said contact    plugs for the photodetector are formed to be at least partially    above the bottom surface of the first interconnect layer for the    transistor and are positioned to be electrically coupled with a    second doped region of the photodetector, the second doped region    having a different polarity than the first doped region.-   12. The method of clause 1, wherein said BEOL stage further    comprises:

sequentially forming a number of interconnect layers above layers formedduring the MOL stage.

-   13. The method of clause 1, wherein said forming contact plugs for    the photodetector comprises:

forming contact plugs for the photodetector's P and N regions by usingdifferent BEOL metals during the BEOL stage

-   14. The method of clause 1, wherein materials used to form said    contact plugs for the transistor comprise at least one of: tungsten,    titanium, or titanium nitride.-   15. The method of clause 1, wherein materials used to form said    contact plugs for the photodetector comprise interconnect metals    including at least one of: copper or aluminum.-   16. A semiconductor device comprising:

a semiconductor substrate;

a transistor formed on said semiconductor substrate;

a photodetector formed on said semiconductor substrate;

contact plugs for the transistor, wherein said contact plugs for thetransistor have at least two portions that are formed from separatesemiconductor material forming processes, and wherein a sidewall of saidcontact plugs for the transistor includes a physical misalignment, whichis a manifestation of said separate semiconductor material formingprocesses; and

contact plugs for the photodetector, wherein said contact plugs for thephotodetector are formed from a single semiconductor material formingprocess.

-   17. The device of clause 16, wherein a top surface of said contact    plugs for the photodetector is higher than the physical misalignment    on the sidewall of said contact plugs for the transistor.-   18. The device of clause 16, wherein the contact plugs for the    transistor include refractory materials formed during a    middle-of-line (MOL) fabrication stage-   19. The device of clause 16, wherein the contact plugs for the    photodetector are entirely made of non-refractory materials from    metal interconnect layers formed during a back-end-of-line (BEOL)    fabrication stage, without any refractory materials from a    middle-of-line (MOL) fabrication stage.-   20. The device of clause 16, wherein the transistor and the    photodetector are formed at a different height on said semiconductor    substrate.-   21. The device of clause 16, wherein, when measured from the    semiconductor substrate, the photodetector is formed on a first    surface that is closer to the semiconductor substrate than a second    surface on which the transistor is formed,-   22. The device of clause 16, wherein a lower portion of the at least    two portions of said contact plugs for the transistor is formed to    be entirely below a bottom surface of a first interconnect layer for    the transistor and are positioned to be electrically coupled and    directly in physical contact with at least one of: the transistor's    gate area, the transistor's source area, or the transistor's drain    area.-   23. The device of clause 22, wherein a first group of said contact    plugs for the photodetector are formed to be entirely below a bottom    surface of a first interconnect layer for the photodetector and are    positioned to be electrically coupled and directly in physical    contact with a first doped region of the photodetector.-   24. The device of clause 23, wherein a second group of said contact    plugs for the photodetector are formed to be at least partially    above the bottom surface of the first interconnect layer for the    transistor and are positioned to be electrically coupled and    directly in physical contact with a second doped region of the    photodetector, the second doped region having a different polarity    than the first doped region.-   25. The device of clause 16, wherein said contact plugs for the    photodetector's P and N regions are of different materials from    different BEOL metal levels.-   26. The device of clause 16, wherein said contact plugs for the    transistor are made of materials comprise at least one of: tungsten,    titanium, or titanium nitride.-   27. The device of clause 16, wherein said contact plugs for the    photodetector are made of materials comprise interconnect metals    including at least one of: copper or aluminum.-   28. The device of clause 16, wherein the photodetector includes a    P-I-N structure having a highly-doped p-type semiconductor region, a    highly-doped n-type semiconductor region, and an intrinsic    photosensitive semiconductor region located between said p-type and    n-type semiconductor regions,

wherein the intrinsic photosensitive semiconductor region comprises astack of semiconductor materials including substrate semiconductormaterial with a first dielectric constant and a photosensitive materialwith a second dielectric constant, the second dielectric constant higherthan the first dielectric constant.

-   29. The device of clause 28,wherein a thickness ratio between the    substrate semiconductor material and other semiconductor materials    in the intrinsic photosensitive semiconductor region combined is    greater than 1 to 5.-   30. The device of clause 16, further comprising:

a select number of dummy fill shapes about a size of the transistor,wherein the dummy fill shapes about the size of the transistor areformed at a same height as the transistor; and

a select number of dummy fill shapes about a size of the photodetector,wherein the dummy fill shapes about the size of the photodetector areformed at the same height as the photodetector.

-   31. The device of clause 16, wherein a top surface of a light    absorption material of the photodetector is higher than a bottom    surface of a lowest layer of metal interconnects for the transistor.-   32. The device of clause 16, wherein the photodetector includes a    light absorption region with a physical structure that has a    sidewall misalignment, which is resulted from two or more separate    material forming processes growing a substantially same material.-   33. The device of clause 16, wherein the photodetector includes a    mirror structure for reducing a thickness of a light absorption    region of the photodetector.-   34. A semiconductor device comprising:

a semiconductor substrate;

a transistor formed on said semiconductor substrate;

a photodetector formed on said semiconductor substrate; and

contact plugs for the photodetector,

wherein at least a portion of said contact plugs for the photodetectoris at a same horizontal level as a first interconnect layer for thetransistor.

(C) for the multiple absorption layer approach:

-   1. A method for fabricating a photodetector and a transistor on a    same semiconductor substrate, the method comprising:

(1) on a semiconductor substrate, epitaxially growing a first layer oflight absorption material of the photodetector over an area where thephotodetector is to be formed;

(2) after said growing the first layer of light absorption material,forming at least one layer of metallic contact plugs for the transistor;and

(3) after said forming at least one layer of metallic contact plugs,forming a second layer of light absorption material of thephotodetector, wherein the second layer of light absorption material isformed atop the first layer of the light absorption material, such thatthe two layers of light absorption material, having a substantially samematerial, form a single light absorption region for the photodetector.

-   2. The method of clause 1, wherein said epitaxially growing the    first layer of light absorption material is performed at a    temperature suitable for the photodetector's light absorption    material to epitaxially grow on a heterogeneous surface.-   3. The method of clause 1, wherein said forming the second layer of    light absorption material is performed at a temperature suitable for    the photodetector's light absorption material to epitaxially grow on    a homogeneous surface.-   4. The method of clause 1, wherein said forming the second layer of    light absorption material is performed at a temperature lower than    said epitaxially growing the first layer of light absorption    material.-   5. The method of clause 1, wherein said forming the second layer of    light absorption material is performed at a temperature lower than a    tolerance temperature of the formed metallic contact plugs for the    transistor.-   6. The method of clause 1, wherein said epitaxially growing the    first layer of light absorption material is performed at a    temperature higher than a tolerance temperature of the formed    metallic contact plugs for the transistor.-   7. The method of clause 1, wherein said epitaxially growing the    first layer of light absorption material comprises:

performing a surface cleaning process at a temperature higher than atolerance temperature of the formed metallic contact plugs for thetransistor.

-   8. The method of clause 1, wherein a top surface of the second layer    of light absorption material is higher than a bottom surface of a    lowest layer of metal interconnects for the transistor.-   9. The method of clause 1, wherein said forming the second layer of    light absorption material comprises:

removing materials deposited over the photodetector from precedingprocesses to expose the first layer of light absorption material.

-   10. The method of clause 9, wherein said forming the second layer of    light absorption material further comprises:

epitaxially growing the second layer of light absorption material atopthe first layer of light absorption material at least until a height ofthe single light absorption region is higher than the at least one layerof metallic contact plugs for the transistor.

-   11. The method of clause 1, wherein the first layer and second    layers of light absorption material are formed by using separate    lithography processes.-   12. The method of clause 11, wherein the separate lithography    processes leave a sidewall misalignment on a structure that    constitutes the single light absorption region-   13. The method of clause 1, further comprising:

before said forming the second layer of light absorption material withinan opening, forming a passivation spacer on a sidewall of the opening topassivate said second layer of light absorption material to reducedevice dark-current.

-   14. The method of clause 1, further comprising:

growing, on the first or second layer of light absorption material, apassivation layer having substrate material; and

directionally etching said passivation layer to form a passivationspacer on said first or second layer of light absorption material.

-   15. A device comprising:

a semiconductor substrate;

a semiconductor transistor formed on said semiconductor substrate; and

a semiconductor photodetector formed on said semiconductor substrate,

wherein a top surface of a light absorption material of thesemiconductor photodetector is higher than a bottom surface of a lowestlayer of metal interconnects for the semiconductor transistor.

-   16. The device of clause 15, further comprising:

a passivation spacer on said first or second layer of light absorptionmaterial.

-   17. The device of clause 15, further comprising a passivation spacer    on a sidewall of the semiconductor photodetector, wherein the    passivation spacer reduces device dark-current.-   18. The device of clause 15, further comprising:

contact plugs for the transistor, wherein the contact plugs for thetransistor are made of refractory materials formed during amiddle-of-line (MOL) fabrication stage; and

contact plugs for the photodetector, wherein the contact plugs for thephotodetector are entirely made of non-refractory materials from metalinterconnect layers formed during a back-end-of-line (BEOL) fabricationstage, without any of the refractory materials from said MOL fabricationstage.

-   19. The device of clause 15, wherein the photodetector includes a    P-I-N structure having a highly-doped p-type semiconductor region, a    highly-doped n-type semiconductor region, and an intrinsic    photosensitive semiconductor region located between said p-type and    n-type semiconductor regions,

wherein the intrinsic photosensitive semiconductor region comprises astack of semiconductor materials including substrate semiconductormaterial with a first dielectric constant and a photosensitive materialwith a second dielectric constant, the second dielectric constant higherthan the first dielectric constant.

-   20. The device of clause 19, wherein a thickness ratio between the    substrate semiconductor material and other semiconductor materials    in the intrinsic photosensitive semiconductor region combined is    greater than 1 to 5.-   21. The device of clause 15, further comprising:

a select number of dummy fill shapes about a size of the transistor,wherein the dummy fill shapes about the size of the transistor areformed at a same height as the transistor; and

a select number of dummy fill shapes about a size of the photodetector,wherein the dummy fill shapes about the size of the photodetector areformed at the same height as the photodetector.

-   22. The device of clause 15, wherein the photodetector includes a    mirror structure for reducing a thickness of the light absorption    region.-   23. A device comprising:

a semiconductor substrate;

a semiconductor transistor formed on said semiconductor substrate; and

a semiconductor photodetector formed on said semiconductor substrate,

wherein the semiconductor photodetector includes a light absorptionregion with a physical structure that has a sidewall misalignment, whichis a manifestation of two or more separate material forming processesgrowing a substantially same material.

-   24. The device of clause 23, wherein at least one set of metal    contact plugs for the transistor or the photodetector is formed    between the two or more separate material forming processes.-   25. The device of clause 24, wherein at least one of the two or more    separate forming processes is performed during or after a    middle-of-line (MOL) fabrication stage.-   26. The device of clause 23, wherein said substantially same    material is a light absorption material for the light absorption    region of the semiconductor photodetector.-   27. The device of clause 23, wherein said substantially same    material includes germanium.-   28. The device of clause 23, further comprising:

a passivation spacer on said light absorption region to reduce devicedark-current, wherein the passivation spacer material includesamorphous-Si, poly-crystalline Si, nitride, high-k dielectric, silicondioxide (SiO2), or any combination thereof.

-   29. The device of clause 23, further comprising:

contact plugs for the transistor, wherein the contact plugs for thetransistor are made of refractory materials formed during amiddle-of-line (MOL) fabrication stage; and

contact plugs for the photodetector, wherein the contact plugs for thephotodetector are entirely made of non-refractory materials from metalinterconnect layers formed during a back-end-of-line (BEOL) fabricationstage, without any of the refractory materials from said MOL fabricationstage.

-   30. The device of clause 23, wherein the photodetector includes a    P-I-N structure having a highly-doped p-type semiconductor region, a    highly-doped n-type semiconductor region, and an intrinsic    photosensitive semiconductor region located between said p-type and    n-type semiconductor regions,

wherein the intrinsic photosensitive semiconductor region comprises astack of semiconductor materials including substrate semiconductormaterial with a first dielectric constant and a photosensitive materialwith a second dielectric constant, the second dielectric constant higherthan the first dielectric constant.,

-   31. The device of claim 30, wherein a thickness ratio between the    substrate semiconductor material and other semiconductor materials    in the intrinsic photosensitive semiconductor region combined is    greater than 1 to 5.-   32. The device of clause 23, further comprising:

a select number of dummy fill shapes about a size of the transistor,wherein the dummy fill shapes about the size of the transistor areformed at a same height as the transistor; and

a select number of dummy fill shapes about a size of the photodetector,wherein the dummy fill shapes ab out the size of the photodetector areformed at the same height as the photodetector.

-   33. The device of clause 23, wherein the photodetector includes a    mirror structure for reducing a thickness of the light absorption    region.

1. A method for fabricating a photodetector and a transistor on a samesemiconductor substrate, the method comprising: on a semiconductorsubstrate, epitaxially growing a first layer of light absorptionmaterial of the photodetector over an area where the photodetector is tobe formed; after said growing the first layer of light absorptionmaterial, forming at least one layer of metallic contact plugs for thetransistor; and after said forming at least one layer of metalliccontact plugs, forming a second layer of light absorption material ofthe photodetector, wherein the second layer of light absorption materialis formed atop the first layer of the light absorption material, suchthat the two layers of light absorption material, having a substantiallysame material, form a single light absorption region for thephotodetector, wherein said forming the second layer of light absorptionmaterial is performed at a temperature lower than a tolerancetemperature of the formed metallic contact plugs for the transistor. 2.The method of claim 1, wherein said epitaxially growing the first layerof light absorption material is performed at a temperature suitable forthe photodetector's light absorption material to epitaxially grow on aheterogeneous surface.
 3. The method of claim 1, wherein said formingthe second layer of light absorption material is performed at atemperature suitable for the photodetector's light absorption materialto epitaxially grow on a homogeneous surface.
 4. The method of claim 1,wherein said forming the second layer of light absorption material isperformed at a temperature lower than said epitaxially growing the firstlayer of light absorption material.
 5. (canceled)
 6. The method of claim1, wherein said epitaxially growing the first layer of light absorptionmaterial is performed at a temperature higher than a tolerancetemperature of the formed metallic contact plugs for the transistor. 7.The method of claim 1, wherein said epitaxially growing the first layerof light absorption material comprises: performing a surface cleaningprocess at a temperature higher than a tolerance temperature of theformed metallic contact plugs for the transistor.
 8. The method of claim1, wherein a top surface of the second layer of light absorptionmaterial is higher than a bottom surface of a lowest layer of metalinterconnects for the transistor.
 9. The method of claim 1, wherein saidforming the second layer of light absorption material comprises:removing materials deposited over the photodetector from precedingprocesses to expose the first layer of light absorption material. 10.The method of claim 9, wherein said forming the second layer of lightabsorption material further comprises: epitaxially growing the secondlayer of light absorption material atop the first layer of lightabsorption material at least until a height of the single lightabsorption region is higher than the at least one layer of metalliccontact plugs for the transistor.
 11. The method of claim 1, furthercomprising: before said forming the second layer of light absorptionmaterial with an opening, forming a passivation spacer on a sidewall ofthe opening to passivate said second layer of light absorption materialto reduce device dark-current.
 12. The method of claim 1, furthercomprising: growing, on the first or second layer of light absorptionmaterial, a passivation layer having substrate material; anddirectionally etching said passivation layer to form a passivationspacer on said first or second layer of light absorption material.
 13. Amethod for fabricating a photodetector and a transistor on a samesemiconductor substrate, the method comprising: on a semiconductorsubstrate, epitaxially growing a first layer of light absorptionmaterial of the photodetector over an area where the photodetector is tobe formed; after said growing the first layer of light absorptionmaterial, forming at least one layer of metallic contact plugs for thetransistor; and after said forming at least one layer of metalliccontact plugs, forming a second layer of light absorption material ofthe photodetector, wherein the second layer of light absorption materialis formed atop the first layer of the light absorption material, suchthat the two layers of light absorption material, having a substantiallysame material, form a single light absorption region for thephotodetector, wherein said epitaxially growing the first layer of lightabsorption material is performed at a temperature higher than atolerance temperature of the formed metallic contact plugs for thetransistor.
 14. The method of claim 13, wherein said epitaxially growingthe first layer of light absorption material is performed at atemperature suitable for the photodetector's light absorption materialto epitaxially grow on a heterogeneous surface.
 15. The method of claim13, wherein said forming the second layer of light absorption materialis performed at a temperature suitable for the photodetector's lightabsorption material to epitaxially grow on a homogeneous surface. 16.The method of claim 13, wherein said forming the second layer of lightabsorption material is performed at a temperature lower than saidepitaxially growing the first layer of light absorption material. 17.The method of claim 13, wherein said epitaxially growing the first layerof light absorption material comprises: performing a surface cleaningprocess at a temperature higher than a tolerance temperature of theformed metallic contact plugs for the transistor.
 18. The method ofclaim 13, wherein a top surface of the second layer of light absorptionmaterial is higher than a bottom surface of a lowest layer of metalinterconnects for the transistor.
 19. The method of claim 13, whereinsaid forming the second layer of light absorption material comprises:removing materials deposited over the photodetector from precedingprocesses to expose the first layer of light absorption material. 20.The method of claim 19, wherein said forming the second layer of lightabsorption material further comprises: epitaxially growing the secondlayer of light absorption material atop the first layer of lightabsorption material at least until a height of the single lightabsorption region is higher than the at least one layer of metalliccontact plugs for the transistor.
 21. The method of claim 13, furthercomprising: before said forming the second layer of light absorptionmaterial with an opening, forming a passivation spacer on a sidewall ofthe opening to passivate said second layer of light absorption materialto reduce device dark-current.
 22. The method of claim 13, furthercomprising: growing, on the first or second layer of light absorptionmaterial, a passivation layer having substrate material; anddirectionally etching said passivation layer to form a passivationspacer on said first or second layer of light absorption material.
 23. Amethod for fabricating a photodetector and a transistor on a samesemiconductor substrate, the method comprising: on a semiconductorsubstrate, epitaxially growing a first layer of light absorptionmaterial of the photodetector over an area where the photodetector is tobe formed; after said growing the first layer of light absorptionmaterial, forming at least one layer of metallic contact plugs for thetransistor; and after said forming at least one layer of metalliccontact plugs, forming a second layer of light absorption material ofthe photodetector, wherein the second layer of light absorption materialis formed atop the first layer of the light absorption material, suchthat the two layers of light absorption material, having a substantiallysame material, form a single light absorption region for thephotodetector, wherein said epitaxially growing the first layer of lightabsorption material comprises performing a surface cleaning process at atemperature higher than a tolerance temperature of the formed metalliccontact plugs for the transistor.
 24. The method of claim 23, whereinsaid epitaxially growing the first layer of light absorption material isperformed at a temperature suitable for the photodetector's lightabsorption material to epitaxially grow on a heterogeneous surface. 25.The method of claim 23, wherein said forming the second layer of lightabsorption material is performed at a temperature suitable for thephotodetector's light absorption material to epitaxially grow on ahomogeneous surface.
 26. The method of claim 23, wherein said formingthe second layer of light absorption material is performed at atemperature lower than said epitaxially growing the first layer of lightabsorption material.
 27. The method of claim 23, wherein a top surfaceof the second layer of light absorption material is higher than a bottomsurface of a lowest layer of metal interconnects for the transistor. 28.The method of claim 23, wherein said forming the second layer of lightabsorption material comprises: removing materials deposited over thephotodetector from preceding processes to expose the first layer oflight absorption material.
 29. The method of claim 28, wherein saidforming the second layer of light absorption material further comprises:epitaxially growing the second layer of light absorption material atopthe first layer of light absorption material at least until a height ofthe single light absorption region is higher than the at least one layerof metallic contact plugs for the transistor.
 30. The method of claim23, further comprising: before said forming the second layer of lightabsorption material with an opening, forming a passivation spacer on asidewall of the opening to passivate said second layer of lightabsorption material to reduce device dark-current.
 31. The method ofclaim 23, further comprising: growing, on the first or second layer oflight absorption material, a passivation layer having substratematerial; and directionally etching said passivation layer to form apassivation spacer on said first or second layer of light absorptionmaterial.